Applied Physics A

, Volume 26, Issue 4, pp 239–242 | Cite as

Experiments on the formation of low resistance in-contacts on Al-doped ZnSe

  • A. Friberg
  • I. Holwech
  • B. Nøst
Contributed Papers

Abstract

The formation of low-resistance indium contacts on aluminium dopedn-type ZnSe has been followed during the heat treatment. The contacts are formed by heavy doping of the depletion zone. The increased doping results from two different mechanisms. The most important one appears to be diffusion controlled, and the other is believed to be caused by regrowth of ZnSe dissolved in the indium.

PACS

73.40N 

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Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • A. Friberg
    • 1
  • I. Holwech
    • 1
  • B. Nøst
    • 1
  1. 1.Department of PhysicsUniversity of OsloNorway

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