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New oxygen donors in silicon

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Abstract

Oxygen donor traps and oxygen-related precipitates are investigated by deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). The so-called New Donors (ND's) occur after thermal treatments in the temperature range of 650 °–800 ° C. They have a continuous distribution of trap states with respect to energy in the band gap of Si. The concentration of the trap states increases towards the conduction band edge. The precipitates observed are mainly platelets and ribbon-like defects. The formation and annihilation kinetics of ND traps and oxygen-related precipitates are correlated. An “SiO x Interface Model” is proposed to explain the origin and the donor-like behavior of the ND traps. The ND trap spectrum is composed of two different types of trap states: interface states at the surface of precipitates and bound states in the Coulombic wells of a fixed positive charge which is located in the SiO x precipitates.

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Authors and Affiliations

  1. Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Glückstrasse 9, D-8520, Erlangen, Fed. Rep. Germany

    G. Pensl & M. Schulz

  2. Siemens AG, Forschungslaboratorien, D-8520, Erlangen, Fed. Rep. Germany

    K. Hölzlein

  3. Siemens AG, Otto-Hahn-Ring 6, D-8000, München 83, Fed. Rep. Germany

    W. Bergholz

  4. Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, OX1 3PH, Oxford, UK

    J. L. Hutchison

Authors
  1. G. Pensl
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  2. M. Schulz
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  3. K. Hölzlein
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  4. W. Bergholz
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  5. J. L. Hutchison
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Pensl, G., Schulz, M., Hölzlein, K. et al. New oxygen donors in silicon. Appl. Phys. A 48, 49–57 (1989). https://doi.org/10.1007/BF00617763

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  • DOI: https://doi.org/10.1007/BF00617763

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