Abstract
Shallow thermal donors are electrically active oxygen-related thermally formed defects observed in oxygen-rich silicon annealed between 300 ° and 600 ° C. Seven donors have been identified with an average central-cell correction of only 5 meV. In view of their molecule-like nature this close agreement to the effective mass theory prediction for a hydrogen-like donor in silicon is of interest. It is shown that these centres are not correlated to the residual impurities phosphorus and boron but rather to the presence of nitrogen. Nitrogen-doped oxygen-rich samples show increased shallow thermal donor growth and a reduction in the growth of other oxygen-related donors in comparison to normally nitrogen-undoped oxygen-rich samples. A reduction in shallow thermal donor concentration at high nitrogen concentrations is reported.
Similar content being viewed by others
References
P. Wagner, C. Holm, E. Sirtl, R. Oeder, W. Zulehner:Advances in Solid State Physics, „Festkörperprobleme XXIV” (Vieweg, Braunschweig 1984) p. 191
H. Navarro, J. Griffin, J. Weber, L. Genzel: Solid State Commun.58, 151 (1986)
W. Kaiser, H.L. Frisch, H. Reiss: Phys. Rev.12, 1546 (1958) See articles inOxygen, Carbon, Hydrogen, and Nitrogen, MRS Symposia Proc.59 (1986), ed. by J.C. Mikkelsen, S.J. Pearton, J.W. Corbett, S.J. Pennycook (MRS, Pittsburgh 1986)
R.A. Faulkner: Phys. Rev.184, 713 (1969);
W. Kohn: Solid State Phys.5 (1957), ed. by F. Seitz, D. Turnbull (Academic, New York 1957) p. 258
Sh.M. Kogan, T.M. Lifshits: Phys. Status Solidi (a)39, 11 (1979)
E.E. Haller, W.L. Hansen, F.S. Goulding: IEEE Trans. NS-22, 127 (1975)
E. Janźen, R. Stedman, G. Grossman, H.G. Grimmeiss: Phys. Rev. B29, 1907 (1984)
M. Stavola, K.M. Lee: InOxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, MRS Symposia Proc.59 (1986), ed. by J.C. Mikkelsen, S.J. Pearton, J.W. Corbett, S.J. Pennycook (MRS, Pittsburgh 1986) p. 95
G. Bambakidis, G.J. Brown: Phys. Rev. B33, 8180 (1986)
J. Griffin: PhD Thesis, University of Bath, GB (1987)
J.A. Griffin, H. Navarro, J. Weber, L. Genzel: Proc. 14th ICDS, Paris 1986, ed. by H.J. Bardeleben (Trans. Tech. Pub., Aedermannsdorf, Switzerland 1986) p. 997
L.T. Ho, A.K. Ramdas: Phys. Rev. B5, 462 (1972)
J.A. Griffin, H. Navarro, J. Weber, L. Genzel, J.T. Borenstein, J.W. Corbett, L.C. Snyder: J. Phys. C19, L579b (1986)
P. Wagner, R. Oeder, W. Zulehner: Appl. Phys. A46, 73 (1988)
M. Suezawa, K. Sumino: InDefects in Electronic Materials, MRS Symposia Proc.104 (1988, ed. by M. Stavola, S.J. Pearton, G. Davies (MRS, Pittsburgh 1988) p. 193
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Griffin, J.A., Hartung, J., Weber, J. et al. Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon. Appl. Phys. A 48, 41–47 (1989). https://doi.org/10.1007/BF00617762
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00617762