Abstract
Molecule-like defects in crystalline semiconductors can display bistable properties when two different structural arrangements are possible for constant charge on the defects. This introductory paper will review the physical and technical aspects of this new field of research. It also includes a detailed presentation of our experimental studies on the recently discovered bistable thermal donor defect in silicon.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
For a recent review of bistable defects in silicon, see A. Chantre: InDefects in Electronic Materials 1987, ed. by M. Stavola, S.J. Pearton, G. Davies, MRS Symposia Proceedings (North-Holland, New York 1988) p. 37
A. Chantre, D. Bois: Phys. Rev. B31, 7979 (1985)
L.W. Song, X.D. Zhan, B.W. Benson, G.D. Watkins: Phys. Rev. Lett60, 460 (1988)
A. Chantre, L.C. Kimerling: Appl. Phys. Lett.48, 1000 (1986)
L.W. Song, B.W. Benson, G.D. Watkins: Phys. Rev. B33, 1452 (1986)
J.L. Benton, M. Levinson: InDefects in Semiconductors II. ed. by S. Mahajan, J.W. Corbett (North-Holland, New York 1983) p. 95
Ya.I. Latushko, L.F. Makarenko, V.P., Markevich, L.I. Murin: Phys. Status Solidi A93, K 181 (1986)
W. Kaiser, H.L. Frisch, H. Reiss: Phys. Rev.112, 1546 (1958)
R. Oeder, P. Wagner: In Ref. [5], p. 171
A. Bourret: J. Electron. Mater.14a, 129 (1984)
D. Mathiot: Appl. Phys. Lett.51, 904 (1987)
B. Pajot, R.C. Newman, P. Wagner: Private communication
A preliminary report on this work is given in A. Chantre: Appl. Phys. Lett.50, 1500 (1987)
L.C. Kimerling, J.L. Benton: Appl. Phys. Lett.39, 410 (1981)
G.G. De Leo, C.S. Milsted, Jr, J.C. Kralik: Phys. Rev. B31, 3588 (1985)
G.D. Watkins: Private communication