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Applied Physics A

, Volume 33, Issue 2, pp 83–85 | Cite as

Far-infrared donor spectroscopy of MBE-GaAs

  • F. Kuchar
  • R. Meisels
  • G. Weimann
  • H. Burkhard
Contributed Papers

Abstract

Magneto-optical spectra of shallow donors in MBE-GaAs were measured in the far-infrared using Fourier transform spectroscopy. In the purest sample (NI=9×1014cm−3) silicon was observed to be the dominating donor impurity. In a less pure sample sulfur was observed to dominate. The increase of the purity and the elimination of the sulfur contamination was correlated with the change from water cooling to liquid nitrogen cooling of the cooling shrouds around the effusion cells. An increase of the growth temperature was probably also one reason for the increase of the purity.

PACS

73.60 

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Copyright information

© Springer-Verlag 1984

Authors and Affiliations

  • F. Kuchar
    • 1
    • 2
  • R. Meisels
    • 1
    • 2
  • G. Weimann
    • 3
  • H. Burkhard
    • 3
  1. 1.Institut für FestkörperphysikUniversitätWien
  2. 2.Ludwig-Boltzmann-Institut für FestkörperphysikWienAustria
  3. 3.Forschungsinstitut der Deutschen BundespostDarmstadtFed. Rep. Germany

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