Applied Physics A

, Volume 39, Issue 4, pp 243–250 | Cite as

A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon

  • G. Müller
  • S. Kalbitzer
  • H. Mannsperger
Contributed Papers

Abstract

We propose that during deposition of a-Si:H films a chemical equilibrium is established that relates the density of dangling-bond defects near mid-gap to the densities of electrons and holes in the conduction and valence band states. We develop the appropriate chemical reaction formalism and show that our model allows doping, compensation and photo-induced degradation to be treated within a single and unifying approach.

PACS

12.80. Ng 

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Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • G. Müller
    • 1
  • S. Kalbitzer
    • 2
  • H. Mannsperger
    • 2
  1. 1.Messerschmitt-Boelkow-Blohm GmbHMünchen 80Fed. Rep. Germany
  2. 2.Max-Planck-Institut für KernphysikHeidelberg 1Fed. Rep. Germany

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