Applied Physics A

, Volume 39, Issue 4, pp 243–250 | Cite as

A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon

  • G. Müller
  • S. Kalbitzer
  • H. Mannsperger
Contributed Papers


We propose that during deposition of a-Si:H films a chemical equilibrium is established that relates the density of dangling-bond defects near mid-gap to the densities of electrons and holes in the conduction and valence band states. We develop the appropriate chemical reaction formalism and show that our model allows doping, compensation and photo-induced degradation to be treated within a single and unifying approach.


12.80. Ng 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    N.F. Mott: Adv. Phys.16, 49 (1967)Google Scholar
  2. 2.
    W.E. Spear, P.G. LeComber: Solid State Commun.17, 1193 (1975)Google Scholar
  3. 3.
    R.A. Street: Phys. Rev. Lett.49, 1187 (1982)Google Scholar
  4. 4.
    J. Robertson: J. Phys. C17, 349 (1984)Google Scholar
  5. 5.
    H. Mannsperger, S. Kalbitzer, G. Müller: Appl. Phys. (to be published)Google Scholar
  6. 6.
    J. Stuke: Poly-, micro-crystalline and amorphous semiconductors, les editions de physique, ed. by P. Pinard and S. Kalbitzer (1984) p. 415Google Scholar
  7. 7.
    W. Beyer, H. Wagner: J. Appl. Phys.53, 8145 (1982)Google Scholar
  8. 8.
    M. Reinelt, S. Kalbitzer, G. Müller: J. Non-Cryst. Solids59 and60, 169 (1983)Google Scholar
  9. 9.
    G.A. Swartz: Appl. Phys. Lett.44, 697 (1984)Google Scholar
  10. 10.
    G. Mück, N. Kniffler, G. Müller, G. Winterling: Proc. 5th E.C. Photovoltaic Solar Energy Conf., Athens (1983) (Reidel, Dordrecht 1983) p. 723Google Scholar
  11. 11.
    D.L. Staebler, C.R. Wronski: Appl. Phys. Lett.31, 292 (1977)Google Scholar
  12. 12.
    M. Stutzmann, C.C. Tsai, W.B. Jackson: Poly-, microcrystalline and amorphous semiconductors, les editions de physique, ed. by P. Pinard and S. Kalbitzer (1984) p. 671Google Scholar
  13. 13.
    R.A. Street, D.K. Biegelsen, J.C. Knights: Phys. Rev. B24, 969 (1981)Google Scholar
  14. 14.
    G. Müller, H. Mannsperger, S. Kalbitzer: Philos. Mag. (in press)Google Scholar
  15. 15.
    W. Beyer, R. Fischer, H. Overhof: Philos. Mag. B39, 205 (1979)Google Scholar
  16. 16.
    W.E. Spear, P.G. LeComber, S. Kalbitzer, G. Müller: Philos. Mag. B39, 159 (1979)Google Scholar
  17. 17.
    S. Kalbitzer, G. Muller, P.G. LeComber, W.E. Spear: Philos. Mag. B41, 439 (1980)Google Scholar
  18. 18.
    R.A. Street, D.K. Biegelsen: InPhysics of Hydrogenated Amorphous Silicon II, ed. by J.D. Joannopoulos, G. Lucovsky, Topics Appl. Phys.56 (Springer, Berlin, Heidelberg 1984) p. 195Google Scholar
  19. 19.
    W. Beyer, H. Overhof: InSemiconductors and Semimetals 21 C, 258 (Academic, New York 1984)Google Scholar
  20. 20.
    H. Dersch, J. Stuke, J. Beichler: Appl. Phys. Lett.38, 456 (1981)Google Scholar
  21. 21.
    M. Stutzmann: Proc. 11th Intern. Conf. Amorphous and Liquid Semiconductors, Rome, ed. by F. Evangelisti and J. Stuke, J. Non-Cryst. Solids (in press)Google Scholar
  22. 22.
    W. Krühler, H. Pfleiderer, R. Plättner, W. Stetter: Proc. Conf. Optical Effects in Amorphous Semiconductors. American Institute of Physics, Proc.120, 311 (1984)Google Scholar
  23. 23.
    S. Tsuda, N. Nakamura, K. Watanabe, M. Nishikumi, M. Ohnishi, S. Nakano, Y. Kishi, H. Shibuya, Y. Kuwano: Tech. Digest Int. PVSEC-1 Conf, Kobe (1984) p. 213Google Scholar
  24. 24.
    G. Müller: Philos. Mag. (to be published)Google Scholar

Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • G. Müller
    • 1
  • S. Kalbitzer
    • 2
  • H. Mannsperger
    • 2
  1. 1.Messerschmitt-Boelkow-Blohm GmbHMünchen 80Fed. Rep. Germany
  2. 2.Max-Planck-Institut für KernphysikHeidelberg 1Fed. Rep. Germany

Personalised recommendations