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Surface recombination velocity in a silicon optical waveguide

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Abstract

Measurements of the varying infrared absorption by free carriers in a silicon waveguide during intermittent electron bombardment are used to study the surface recombination velocitys. The same values for s are obtained for heat-treated and untreated samples, which supports the theory that electron beam irradiation in itself has a dehydrating effect. Other experiments show thats is not dependent on the energy of the impinging electrons in the range 16–23 keV. Finally, the temperature dependence ofs in gold-doped silicon is estimated. Ifs is written in the forms=s 0(293/T)x,x is found to be 2.1±0.2 in the temperature interval 261K≦T≦309K.

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Authors and Affiliations

  1. Physics Department, Royal Institute of Technology, S-10044, Stockholm, Sweden

    M. Willander

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  1. M. Willander
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Willander, M. Surface recombination velocity in a silicon optical waveguide. Appl. Phys. A 31, 45–49 (1983). https://doi.org/10.1007/BF00617187

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