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Applied Physics A

, Volume 28, Issue 2, pp 99–102 | Cite as

Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing

  • A. Turos
  • O. Meyer
  • J. Geerk
Contributed Papers

Abstract

Supersaturated surface alloys produced by very high dose (0.8−2.6×1017cm−2) implantation of As-ions into silicon and subsequent pulsed electron-beam annealing have been investigated by means of the channeling technique. The maximum solubility limit of 7×1021 As/cm3 has been determined. It exceeds the equilibrium solubility limit by more than a factor of 4. Angular scan measurements indicated that for doses above 1×1017cm−2 As atoms are displaced by about 0.12 Å from the regular lattice sites.

PACS

61.70 81.40 

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Copyright information

© Springer-Verlag 1982

Authors and Affiliations

  • A. Turos
    • 1
  • O. Meyer
    • 1
  • J. Geerk
    • 1
  1. 1.Kernforschungszentrum KarlsruheInstitut für Angewandte Kernphysik IKarlsruhe 1Fed. Rep. Germany

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