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Applied Physics A

, Volume 49, Issue 6, pp 659–664 | Cite as

Temperature characteristics of positron trapping at defects in electron-irradiated silicon

  • Motoko -Kwete
  • D. Segers
  • M. Dorikens
  • L. Dorikens-Vanpraet
  • P. Clauws
  • I. Lemahieu
Solids and Materials

Abstract

Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.

PACS

61.70 61.80 78.70 

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Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • Motoko -Kwete
    • 1
  • D. Segers
    • 1
  • M. Dorikens
    • 1
  • L. Dorikens-Vanpraet
    • 1
  • P. Clauws
    • 2
  • I. Lemahieu
    • 2
  1. 1.Laboratory for Nuclear PhysicsPositron CentreGhentBelgium
  2. 2.Laboratory of Crystallography and Solid State StudiesR.U. GhentGhentBelgium

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