Applied Physics A

, Volume 34, Issue 3, pp 155–161 | Cite as

Trap spectrum of the “new oxygen donor” in silicon

  • K. Hölzlein
  • G. Pensl
  • M. Schulz
Contributed Papers


Electronic properties of thenew oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014–1016 cm−3 eV−1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of thenew donor is explained by interface states occuring at the surface of SiO x precipitates.


Oxygen Spectroscopy Silicon Thin Film Operating Procedure 
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  1. 1.
    W. Kaiser, H.L. Frisch, H. Reiss: Phys. Rev.112, 1546 (1958)Google Scholar
  2. 2.
    G.S. Oehrlein, J.W. Corbett: Mater. Res. Soc. Symp. Proc.14, 107 (1983)Google Scholar
  3. 3.
    V. Cazcarra, P. Zunino: J. Appl. Phys.51, 4206 (1980)Google Scholar
  4. 4.
    M. Tajima, T. Masui, T. Abe, T. Iizuka: InSemiconductor Silicon 1981, ed. by H. R. Huff, R. J. Kriegler, Y. Takeishi (Electrochem. Soc., Pennington 1981) p. 72Google Scholar
  5. 5.
    A. Ohsawa, R. Takizawa, K. Honda, A. Shibatomi, S. Ohkawa: J. Appl. Phys.53, 5733 (1982)Google Scholar
  6. 6.
    M. Tajima, U. Gösele, J. Weber, R. Sauer: Appl. Phys. Lett.43, 270 (1983)Google Scholar
  7. 7.
    A. Kanamori, M. Kanamori: J. Appl. Phys.50, 8095 (1979)Google Scholar
  8. 8.
    D.V. Lang: J. Appl. Phys.45, 3014, 3023 (1974)Google Scholar
  9. 8.a
    D.V. Lang: InThermally Stimulated Relaxation in Solids, ed. by P. Bräunlich, Topics Appl. Phys.37 (Springer, Berlin, Heidelberg, New York 1979) Chap. 3Google Scholar
  10. 9.
    K. Hölzlein, G. Pensl, M. Schulz, P. Stolz: To be publishedGoogle Scholar
  11. 10.
    M. Schulz, N.M. Johnson: Solid State Commun.25, 481 (1978)Google Scholar
  12. 11.
    K.L. Wang: InSemiconductor Silicon 1977, ed. by H. R. Huff and E.H. Sirtl (Electrochem. Soc., Princeton 1977) p. 404Google Scholar
  13. 12.
    N.M. Johnson: J. Vac. Sci. Technol.21, 303 (1982)Google Scholar
  14. 13.
    H. Lefevre, M. Schulz: Appl. Phys.12, 45 (1977)Google Scholar
  15. 14.
    A. Goetzberger, E. Klausmann, M. Schulz: CRC Critical Rev. Solid State Sci.6, 1 (1976)Google Scholar
  16. 15.
    M. Schulz: Surf. Sci.132, 422 (1983)Google Scholar
  17. 16.
    R.C. Newman, M.J. Binns, W.P. Brown, F.M. Livingston, S. Messoloras, R.J. Stewart, J.G. Wilkes: InProc. 12th Intern. Conf. on Defects in Semiconductors, ed. by C. A. J. Ammerlaan (North-Holland, Amsterdam 1983) p. 264Google Scholar
  18. 17.
    N. Inoue, K. Wada, J. Osaka: In [Ref. 4, p. 282] p. 281Google Scholar
  19. 18.
    S. Kishino, Y. Matsushita, M. Kanamori, T. Iizuka: Jpn. J. Appl. Phys.21, 1 (1982)Google Scholar
  20. 19.
    R.R. Razouk, B.E. Deal: J. Electrochem. Soc.126, 1573 (1979)Google Scholar

Copyright information

© Springer-Verlag 1984

Authors and Affiliations

  • K. Hölzlein
    • 1
  • G. Pensl
    • 1
  • M. Schulz
    • 1
  1. 1.Institut für Angewandte PhysikUniversität Erlangen-NürnbergErlangenFed. Rep. Germany

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