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Applied Physics A

, Volume 34, Issue 3, pp 155–161 | Cite as

Trap spectrum of the “new oxygen donor” in silicon

  • K. Hölzlein
  • G. Pensl
  • M. Schulz
Contributed Papers

Abstract

Electronic properties of thenew oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014–1016 cm−3 eV−1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of thenew donor is explained by interface states occuring at the surface of SiO x precipitates.

Keywords

Oxygen Spectroscopy Silicon Thin Film Operating Procedure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1984

Authors and Affiliations

  • K. Hölzlein
    • 1
  • G. Pensl
    • 1
  • M. Schulz
    • 1
  1. 1.Institut für Angewandte PhysikUniversität Erlangen-NürnbergErlangenFed. Rep. Germany

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