Applied Physics A

, Volume 49, Issue 3, pp 279–283 | Cite as

Photoexcitation of electron-hole pairs during SIMS

  • J. Kempf
  • M. Nonnenmacher
  • H. H. Wagner
Surfaces, Interfaces and Layer Structures


During analysis with SIMS (secondary ion mass spectroscopy) a HeNe laser beam was focussed on the sample surface. While sputtering Si with oxygen ions, the laser irradiation produced a strong increase of the target current and the SIMS intensities as well. This was found for lightly p-doped Si only, whereas no effect was observed for highly p-doped or n-doped Si. To explain this we assume that a depletion layer exists under the surface oxide layer and free charged carriers are created therein by laser excitation. The laser induced effects observed in the SIMS intensity or the target current can be used for measuring the profile of an ion beam or for measuring the alignment of an ion beam at a laser marked target. In addition, laser irradiation combined with SIMS allows one to measure qualitatively both the profile of the doping impurity and its electrically active part.


07.75 73.30 79.60 


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  1. 1.
    J.A. McHugh:Methods and Phenomena 1, ed. by A.W. Czanderna (Elsevier, New York 1973)Google Scholar
  2. 2.
    G. Kaus, J.E. Kempf: In Proc. 7th Int. Vac. Congr. & 3rd Int. Conf. Solid Surf., Vienna 1977, 2277Google Scholar
  3. 3.
    J. Kempf, M. Nonnenmacher, H.H. Wagner: Appl. Phys. A47, 137 (1988)Google Scholar
  4. 4.
    J. Kempf, H.H. Wagner:Topics Curr. Phys. 37 (Springer, Berlin, Heidelberg 1984) p. 87Google Scholar
  5. 5.
    J. Kempf, G. Kaus: Appl. Phys.13, 261 (1977)Google Scholar
  6. 6.
    J. Kempf: IBM Technical Report, TR 28.111, June 1 (1979)Google Scholar
  7. 7.
    Y. Homma, Y. Ishii: J. Vac. Sci. Technol. A3, 351 (1985)Google Scholar
  8. 8.
    M. Maier, D. Bimberg, H. Baumgart, F. Phillips:SIMS. Springer Ser. Chem. Phys. Vol.19 (Springer, Berlin, Heidelberg 1981)Google Scholar
  9. 9.
    S.M. Sze:Physics of Semiconductor Devices (Wiley, New York 1981)Google Scholar
  10. 10.
    J.I. Pankove:Optical Processes in Semiconductors in Electrical Engineering Series (Prentice Hall, New Jersey 1971)Google Scholar
  11. 11.
    U.R. Behrisch (ed.):Sputtering by Particle Bombardment, Topics Appl. Phys.42 and52 (Springer, Berlin, Heidelberg 1981 and 1983)Google Scholar
  12. 12.
    F.F.Y. Wang:Impurity Doping Process in Silicon, Materials Processing Theory and Practices, Vol. 2 (North-Holland, Amsterdam 1981)Google Scholar
  13. 13.
    H.W. Werner:Thin Film and Depth Profile Analysis, Topics Curr, Phys.375 (Springer, Berlin, Heidelberg 1984)Google Scholar
  14. 14.
    J.F. Ready:Industrial Application of Lasers (Academic, New York 1978)Google Scholar
  15. 14.a
    D. Baeuerle (ed.):Laser Processing and Diagnostics (Springer, Berlin, Heidelberg 1984)Google Scholar
  16. 15.
    J. Kempf: Appl. Phys. A45, 77 (1988)Google Scholar

Copyright information

© Springer-Verlag 1989

Authors and Affiliations

  • J. Kempf
    • 1
  • M. Nonnenmacher
    • 1
  • H. H. Wagner
    • 1
  1. 1.IBM HeidelbergHeidelbergFed. Rep. Germany

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