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Electrical conduction in Cu/Mn multilayer films

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Abstract

Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford >5 nm. The thickness dependence of room temperature resistivity (ϱ RT) and TCR shows oscillatory behaviour.

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Authors and Affiliations

  1. Department of Physics, University of the West Indies, St. Augustine, Trinidad (WI)

    M. A. Angadi & K. Nallamshetty

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  1. M. A. Angadi
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  2. K. Nallamshetty
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Angadi, M.A., Nallamshetty, K. Electrical conduction in Cu/Mn multilayer films. Appl. Phys. A 49, 273–277 (1989). https://doi.org/10.1007/BF00616854

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