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Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures

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Abstract

A simple selection rule for epitaxial growth techniques, which is based on morphological stability of the substrate surface is proposed. According to this rule a certain growth technique should be used for preparing a specific device structure of a three-dimensional monolithically integrated optical or electronic circuit. The formulae for morphological stability functions for LPE, MO, VPE, and MBE growth techniques are given. Calculations performed for the GaAs/Al x Ga1−x As material system by using the linear morphological stability theory of Mullins and Sekerka suggest that from the point of view of morphological stability the most suitable growth technique for fabrication of three-dimensional monolithically integrated optical and electronic device structures is the MBE technique.

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Authors and Affiliations

  1. Department of Physics, Chalmers University of Technology, S-41296, Göteborg, Sweden

    M. A. Herman & T. G. Andersson

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  1. M. A. Herman
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  2. T. G. Andersson
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On leave from the Institute of Physics, Polish Academy of Sciences, PL-02-668 Warsaw, Poland

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Herman, M.A., Andersson, T.G. Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures. Appl. Phys. A 41, 243–252 (1986). https://doi.org/10.1007/BF00616846

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  • DOI: https://doi.org/10.1007/BF00616846

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