Advertisement

Applied Physics A

, Volume 41, Issue 3, pp 233–235 | Cite as

Coevaporation phosphorus doping in Si grown by molecular beam epitaxy

  • R. A. A. Kubiak
  • G. Patel
  • W. Y. Leong
  • R. Houghton
  • E. H. C. Parker
Surfaces, Interfaces, and Layer Structures

Abstract

Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of “potential enhanced doping” indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE.

PACS

73.60.Fw 81.15Ef 68.55+b 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    J.C. Bean: InDoping Processes in Silicon, ed. by F.F.Y. Wang (North-Holland, Amsterdam 1981) Chap. 4Google Scholar
  2. 2.
    R.A.A. Kubiak, W.Y. Leong, E.H.C. Parker: Electrochem. Soc. Proc.85-7, 169 (1985)Google Scholar
  3. 3.
    R.A.A. Kubiak, W.Y. Leong, E.H.C. Parker: Appl. Phys. Lett.46, 565 (1985)Google Scholar
  4. 4.
    R.A.A. Kubiak, W.Y. Leong, E.H.C. Parker: J. Electrochem. Soc.132, 2738 (1985)Google Scholar
  5. 5.
    Y.G. Chai: Appl. Phys. Lett.45, 985 (1984)Google Scholar
  6. 6.
    W.Y. Leong, R.A.A. Kubiak, E.H.C. Parker: Electrochem. Soc. Proc.85-7, 140 (1985)Google Scholar
  7. 7.
    R.A.A. Kubiak, W.Y. Leong, R. Houghton, E.H.C. Parker: Appl. Phys. July 1986Google Scholar
  8. 8.
    M. Hansen, K. Anderko: InConstitution of Binary Alloys (McGraw Hill, New York 1958) pp. 1088–1090Google Scholar
  9. 9.
    S.S. Iyer, R.A. Metzger, F.G. Allen: J. Appl. Phys.52, 5608 (1981)Google Scholar

Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • R. A. A. Kubiak
    • 1
  • G. Patel
    • 1
  • W. Y. Leong
    • 1
  • R. Houghton
    • 1
  • E. H. C. Parker
    • 1
  1. 1.Solid State MBE Research Group, Sir John Cass Faculty of Physical Sciences and TechnologyCity of London PolytechnicLondonUK

Personalised recommendations