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Epitaxial nickel and cobalt suicide formation by rapid thermal annealing

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Abstract

Thin films of epitaxial NiSi2 and CoSi2 were formed by short-duration incoherent light exposure of evaporated Ni or Co films on <111> Si single crystals. The crystalline quality of these suicides is comparable to what has been obtained for long-duration furnace annealed suicides, as deduced from channeling measurements. NiSi2 is of high crystalline quality at all temperatures at which it is formed whereas the CoSi2 films recrystallize at a temperature of ∼980°C.

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Authors and Affiliations

  1. Institute of Physics, University of Aarhus, DK-8000, Aarhus C, Denmark

    J. Chevallier & A. Nylandsted Larsen

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  1. J. Chevallier
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  2. A. Nylandsted Larsen
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Chevallier, J., Larsen, A.N. Epitaxial nickel and cobalt suicide formation by rapid thermal annealing. Appl. Phys. A 39, 141–145 (1986). https://doi.org/10.1007/BF00616832

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