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Applied Physics A

, Volume 39, Issue 2, pp 129–133 | Cite as

The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures

  • P. L. Hanselaer
  • W. H. Laflère
  • R. L. Van Meirhaeghe
  • F. Cardon
Contributed Papers

Abstract

In this paper, the influence of two pre-evaporation surface treatments on the electrical characteristics of n- and p-Si/Au, Cr and Ti MIS diodes are studied. A strong dependence of the barrier height on the pre-evaporation treatment is observed and is found to be independent of the metal work function. In order to explain this, it is suggested that the interfacial charges are strongly affected by the pre-evaporation treatment used.

PACS

73.30 73.40Q 

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Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • P. L. Hanselaer
    • 1
  • W. H. Laflère
    • 1
  • R. L. Van Meirhaeghe
    • 1
  • F. Cardon
    • 1
  1. 1.Laboratorium voor Kristallografie en Studie van de Vaste StofRijksuniversiteit GentGentBelgium

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