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Applied Physics A

, Volume 39, Issue 2, pp 95–99 | Cite as

Critical energy for damage at silicon surfaces bombarded with low-energy argon ions

  • B. Lang
  • A. Taoufik
Contributed Papers

Abstract

The thermal release of argon implanted in Si (100) is studied as a function of bombardment energy in the range 80–1500 eV. There is a critical energy of 300–400 eV above which damage typical of bulk-like amorphous Si is generated. A correlation with the onset of the linear cascade regime is suggested.

PACS

6180J 7920N 

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Copyright information

© Springer-Verlag 1986

Authors and Affiliations

  • B. Lang
    • 1
  • A. Taoufik
    • 1
  1. 1.Laboratoire de CristallographieUA No. 795 du CNRS et Université Louis PasteurStrasbourgFrance

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