Measurement of spin-flip raman gain, effectiveg-value and absorption of radiation under transient electric field conditions in insb

Abstract

We studied the change in Spin-flip Raman (SFR) gain and behaviour of the effectiveg-value as a function of pulsed electric fields inn-type InSb. The samples were held at 1.8 K in magnetic fields up to 1.4 T. Varying the strength of a pulsed electric field applied to the samples parallel to the magnetic field we found a direct correlation between the increase in electron temperature and the decrease of the Raman gain. Measurements of the Raman gain and spontaneous line width at different times after the starting of the electric pulse and during its fall time with a time resolution of 10 ns give no indication of a motional narrowing of the SFR line and of an increase of the gain during the decrease of the electric field pulse. These two predictions were made by Mooradian et al. (1972) to explain the observed transient increase of the intensity of the stimulated SFR Stokes radiation after an electric field across the sample was switched off. With our direct measurement of the Raman gain we could establish that at any time during and after the electric field pulse, the gain is less or equal to the value without electric field. In the electric field region from 0.3 V/cm up to 0.6 V/cm the Raman gain shows several maxima, originating from SFR scattering between different spin splitted conduction band levels. The electron distribution under pulsed electric field conditions give rise to a dynamically varying absorption mechanism of transmitted radiation. Time resolved transmission measurements explain the observed increase of stimulated SFR Stokes radiation during the switch-off time of electric field pulses by a lower absorption of radiation and not by a larger gain.