Abstract
Spin-dependent resonance (SDR) measurements show several paramagnetic centres at silicon-oxide interfaces after room temperature oxide growth. The density of centres is about 1011 cm−2, and increases with the thickness of the oxide at a similar rate. Upon heating in N2 in the range 100–400 K the signals reduce, but recover logarithmically with time upon standing in air. They are ascribed to hydrogen or hydrogen containing species which diffuse through the oxide to the interface.
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On leave at: Xerox, Palo Alto Research Center, Palo Alto, CA 94304, USA