Thermal depopulation studies of electron traps in ion implanted silica layers
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The electron trapping sites created by ion implantation through the SiO2 layer are considered. Detailed measurements based on photoinjection and thermodepopulation techniques and computer calculation have been carried out. The density of trapping states versus energy depth appears to have a form of two Gaussian peaks. They are located at 1.17 and 1.30 eV below the SiO2 conduction band having a half width of 0.04 eV.
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