Abstract
Ion bombardment induced mixing of Ta-Si films has been studied using 400 keV argon ions. Doses varied from 7×1014 to 1×1017 Ar+ cm−2 with post-bombardment anneals of 180–900 s at temperatures in the range 600–860 °C using radiant heating. Silicide uniformity and stoichiometry were determined using alpha backscattering spectrometry. Optimum fabrication parameters were determined with regard to subsequent material sheet resistivity, temperature coefficient of resistance and application as a temperature sensing material. Similar measurements were made on CoSi2 layers prepared by annealing ion bombarded samples and comparison with silicide films arising from purely thermal annealing was made.
CoSi2 was found to be the more suitable material for temperature-sensor applications, showing a positive linear variation in sheet resistivity in the range 0–400 °C for samples which could be prepared simply and reproducibly.
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