Abstract
Positron-annihilation technique has been used to study the recovery of defects in α-irradiated n-type GaAs specimens. The Doppler-broadened lineshape parameterS, shows a smooth recovery of defects over the temperature region 120–600° C. The lifetime measurements have also been performed to characterise the types of defects present. The positron mean lifetimeτ m follows the behaviour of the “S” parameter, indicating a rather complex defect structure recovery. The variation in the defect specific parameter,R, with temperature is also consistent with these observations.
Similar content being viewed by others
References
H.Y. Fan: 7th Intern. Conf. on the Physics of Semiconductors (Radiation damage in Semiconductors), Paris-Royaumont (1964) p. 1
L.W. Aukerman, R.D. Graft: Phys. Rev.127, 1576 (1962)
T.I. Kolchenko, V.M. Lomako: Radiat. Eff.37, 67 (1978)
A.D. Pogrebnyak, V.S. Lopation, R.G. Ziyakaev, S.V. Vorobiev: Phys. Lett.97A, 362 (1983)
S.E. Bochkarev, L.A. Ivanyutin, V.P. Komlev, E.P. Prokopev, V.M. Samollov, V.G. Pirsor, Yu.V. Funtikov: Sov. Phys. Solid State23, 118 (1981)
L.J. Cheng, J.P. Karins, J.W. Corbett: J. Appl. Phys.50, 2962 (1979)
K.P. Aref'ev, V.N. Brudnyi, D.L. Budnitskii, S.A. Vorob'ev, A.A. Tsoi: Sov. Phys. Semicond.13, 669 (1979)
D. Pons, P.M. Mooney, J.E. Bourgoin: J. Appl. Phys.51, 2038 (1981)
D.V. Lang, R.A. Logan, Z.C. Kimerling: Phys. Rev. B15, 4874 (1977)
D. Pons, J. Bourgoin: Phys. Rev. Lett.47, 1293 (1981)
D. Pons, A. Mircea, J. Bourgoin: J. Appl. Phys.51, 4150 (1980)
D. Pons: InDefects and Radiation Effects in Semiconductors (1980),Inst. Phys. Conf. Ser. N-59, 269 (1981)
D. Stievenard, J.E. Bourgoin, D. Pons: Physica116B, 394 (1983)
P. Kirkegaard, M. Eldrup: Comp. Phys. Commun.7, 401 (1974), Riso report (1979)
A. Sen Gupta, S.V. Naidu, R.K. Bhandari, P. Sen: Phys. Lett.104A, 117 (1984)
W. Triftshäuser: Phys. Rev. B12, 4634 (1975)
G. Dlubek, O. Brummer, F. Plazaola, P. Hautojärvi: J. Phys. C (to be published)
S. Dannefaer, B. Hogg, D. Kerr: Phys. Rev. B30, 3355 (1984)
A. Mircea, D. Bois: InDefects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. (1978)
R.N. West: Adv. Phys.22, 263 (1977)
J.W. Cleland, R.F. Bass, J.H. Crawford, Jr.: In [Ref. 1, p. 401]
F.H. Eisen: In [Ref. 1, p. 367]
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sen Gupta, A., Naidu, S.V. & Sen, P. Annealing study of defects in alpha-irradiated n-type GaAs by positron-annihilation technique. Appl. Phys. A 40, 95–99 (1986). https://doi.org/10.1007/BF00616484
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/BF00616484