Abstract
We have observed that hydrogen implantation in p-type boron-doped silicon material induces a neutralization of boron in a 10 μm deep region after the Schottky diodes have been heated at a 90° C temperature under reverse-biasing. The profile of neutralized acceptors can be reversibly shaped by successively applying different reverse biases.
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Zundel, T., Courcelle, E., Mesli, A. et al. Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodes. Appl. Phys. A 40, 67–69 (1986). https://doi.org/10.1007/BF00616479
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DOI: https://doi.org/10.1007/BF00616479