Applied Physics A

, Volume 36, Issue 1, pp 37–42 | Cite as

A simple formula for low-energy sputtering yields

  • Ch. Steinbrüchel
Contributed Papers


A simple formula for low-energy sputtering yields of elemental targets is presented. The formula follows directly from Sigmund's theory but includes a modified form of the functionα(M t /M p ) and an accurate expression for the nuclear stopping cross section. Good agreement with experimental results is obtained for the projectiles Ne, Ar, Kr sputtering not too reactive surfaces at energies ≲1 keV. Further experiments are suggested as well as theoretical work concerning the meaning of the surface binding energy and the effect of the surface on the sputtering process in general.




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  1. 1.
    Sputtering by Ion Bombardment I, ed. by R. Behrisch, Topics Appl. Phys.47 (Springer, Berlin, Heidelberg, New York 1981)Google Scholar
  2. 2.
    Sputtering by Ion Bombardment II, ed. by R. Behrisch, Topics Appl. Phys.52 (Springer, Berlin, Heidelberg, New York 1983)Google Scholar
  3. 3.
    P. Sigmund: Phys. Rev.184, 383 (1969)Google Scholar
  4. 4.
    P. Sigmund: In Ref. 1 p. 9Google Scholar
  5. 5.
    W.D. Wilson, L.G. Haggmark, J.P. Biersack: Phys. Rev. B15, 2458 (1977)Google Scholar
  6. 6.
    P.C. Zalm: J. Appl. Phys.54, 2660 (1983)Google Scholar
  7. 7.
    H.H. Andersen, H.L. Bay: J. Appl. Phys.46, 2416 (1975)Google Scholar
  8. 8.
    H.H. Andersen, H.L. Bay: In Ref. 1 p. 145Google Scholar
  9. 9.
    N. Laegreid, G.K. Wehner: J. Appl. Phys.32, 365 (1961)Google Scholar
  10. 10.
    D. Rosenberg, G.K. Wehner: J. Appl. Phys.33, 1842 (1962)Google Scholar
  11. 11.
    H. Oechsner: Z. Physik261, 37 (1973)Google Scholar
  12. 12.
    C.H. Weijsenfeld: Philips Res. Rept. Suppl., No. 2 (1967)Google Scholar
  13. 13.
    M.P. Seah: Thin Solid Films81, 279 (1981)Google Scholar
  14. 14.
    M.T. Robinson: In Ref. 1 p. 73Google Scholar
  15. 15.
    K.A. Gschneider: InSolid State Physics 16, 275 (Academic Press, New York 1964)Google Scholar
  16. 16.
    W.O. Hofer, H.L. Bay, P.J. Martin: J. Nucl. Mater.76/77, 156 (1978)Google Scholar
  17. 17.
    Ch. Steinbriichel, D.M. Gruen: J. Vac. Sci. Technol.18, 235 (1981)Google Scholar
  18. 18.
    Ion Beam Etch Rates, Bulletin No. 137-178, Commonwealth Scientific Corporation, Alexandria, VA, USAGoogle Scholar
  19. 19.
    J.N. Smith, Jr., C.H. Meyer, Jr., J.K. Layton: J. Appl. Phys.46, 4291 (1975)Google Scholar
  20. 20.
    B. Sartwell: J. Appl. Phys.50, 7887 (1979)Google Scholar
  21. 21.
    D.M. Ullevig, J.F. Evans: J. Vac. Sci. Technol.20, 379 (1982)Google Scholar
  22. 22.
    J. Kirschner, H.W. Etzkorn: Appl. Phys. A29, 133 (1982)Google Scholar
  23. 23.
    G. Carter, B. Navinsek, J.L. Whitton: In Ref. 2 p. 231Google Scholar
  24. 24.
    U. Littmark, W.O. Hofer: J. Mater. Sci.13, 2577 (1978)Google Scholar
  25. 25.
    K. Winterbon: Radiat. Eff.13, 215 (1972)Google Scholar
  26. 26.
    P.C. Zalm: Private communicationGoogle Scholar
  27. 27.
    D.L. Smith: J. Nucl. Mater.75, 20 (1978)Google Scholar
  28. 28.
    J. Bohdansky, J. Roth, H.L. Bay: J. Appl. Phys.51, 2861 (1980)Google Scholar
  29. 29.
    Y. Yamamura, N. Matsunami, N. Itoh: Radiat. Eff. Lett.68, 83 (1982)Google Scholar
  30. 30.
    D.P. Jackson: Can. J. Phys.53, 1513 (1975)Google Scholar
  31. 31.
    P. Blank, K. Wittmaack: J. Appl. Phys.50, 1519 (1979)Google Scholar

Copyright information

© Springer-Verlag 1985

Authors and Affiliations

  • Ch. Steinbrüchel
    • 1
  1. 1.Laboratories RCA Ltd.ZürichSwitzerland

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