Abstract
Photo-electric properties of a-Si:H(F)/a-SiGex:H(F) multilayer films were investigated by measurements of optical absorption, and photoconductivity in both steady and transient modes with the repetition length and the difference in the optical gap between a-Si:H(F) and a-SiGex:H(F) as the variables. Measurements of primary photocurrent clarified that photosensitivity for the multilayer films extended to longer wavelengths of around 725 nm, while high resistivity was maintained despite of lowering the band gap.
The drift mobility of electrons was measured by the time-of-flight technique, showing 10−2-10−3 cm2/Vs, while the drift mobility-lifetime products of electron was maintained to be 10−7 cm2/V. On the other hand, the drift mobility of holes was 10−3 cm2/Vs, which was the similar magnitude to that of a-Si:H(F).
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Shirai, H., Tanabe, A., Oda, S. et al. Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum. Appl. Phys. A 41, 259–265 (1986). https://doi.org/10.1007/BF00616047
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DOI: https://doi.org/10.1007/BF00616047