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Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

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Abstract

The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.

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References

  1. I.W. Boyd: InDielectric Layers in Semiconductors: Novel Technologies and Devices, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, Les Ulis, France 1986) p. 177

    Google Scholar 

  2. E. Fogarassy, C.W. White, A. Slaoui, C. Fuchs, P. Siffert: Appl. Phys. Lett, (submitted)

  3. F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. Unamuno, P. Siffert: Appl. Phys.A 45, 361 (1988)

    Google Scholar 

  4. A. Slaoui, E. Fogarassy, C.W. White, P. Siffert: Appl. Phys. Lett, (submitted)

  5. G.H. Schiroky: J. Math. Sci.22, 3595 (1987)

    Google Scholar 

  6. N. Bottka, P.J. Walsh, R.Z. Dalbey: J. Appl. Phys.54, 1104 (1983)

    Google Scholar 

  7. E. Fogarassy, A. Slaoui, C. Fuchs: InNATO Proc. Workshop on “Emerging technologies for in situ processing (Cargèse, France 1987)

    Google Scholar 

  8. Y.S. Liu, S.W. Chiang, F. Bacon: Appl. Phys. Lett.38, 1005 (1981)

    Google Scholar 

  9. D.H. Lowndes, R.F. Wood, J. Narayan: Phys. Rev. Lett.52, 561 (1984)

    Google Scholar 

  10. American Institute of Physics Handbook, 2nd edn. (Mc Graw-Hill, New York) pp. 6–106

  11. H.E. Bennett, J.O. Porteus: J. Opt. Soc. Am.51, 123 (1961)

    Google Scholar 

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Authors and Affiliations

  1. Laboratoire PHASE (UA du CNRS no. 292), Centre de Recherches Nucleaires (IN2P3), F-67037, Strasbourg Cedex, France

    F. Foulon, A. Slaoui, E. Fogarassy, C. Fuchs & P. Siffert

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  1. F. Foulon
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  2. A. Slaoui
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  3. E. Fogarassy
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  4. C. Fuchs
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  5. P. Siffert
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Foulon, F., Slaoui, A., Fogarassy, E. et al. Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements. Appl. Phys. A 47, 255–258 (1988). https://doi.org/10.1007/BF00615931

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  • DOI: https://doi.org/10.1007/BF00615931

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