Applied Physics A

, Volume 47, Issue 3, pp 237–247 | Cite as

Characteristics of thin gate dielectric in a rapid thermal processing machine and temperature uniformity studies

  • N. Chan Tung
  • Y. Caratini
  • C. D'Anterroches
  • J. L. Buevoz
Photoformation of Dielectrics II

Abstract

Rapid Thermal oxidation (RTO) of silicon has been investigated in the temperature range 1000° to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energyEa of 1.4 eV. Rapid thermal nitridation of SiO2 (96 Å) has been performed at three different temperatures: 1150°, 1200°, and 1250°C for a nitridation time up to 150 s. The characteristics of both materials have been investigated by capacitance-voltage, current-voltage, high resolution transmission electron microscopy and Auger spectroscopy. The results will be discussed with special emphasis on breakdown field statistics. The influence of Rapid Thermal Annealing (RTA) on the characteristics of both oxide and nitrided oxide will also be presented. A simulation model of a rapid thermal processing machine is presented with particular attention to the formation of slip lines. The theoretical results are in good agreement with those obtained experimentally.

PACS

7755 + F 7750 + P 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, A.R. Le Blanc: IEEE J. Solid-State Circuits9, 256 (1974)Google Scholar
  2. 2.
    S.S. Wong, C.G. Sodini, T.W. Ekstedt, H.R. Grinolds, K.H. Jackson, S.H. Kwan: J. Electrochem. Soc.130, 1139 (1983)Google Scholar
  3. 3.
    F.L. Terry, Jr., R.J. Aucoin, M.L. Naiman, S.D. Senturia: IEEE EDL-4, 191 (1983)Google Scholar
  4. 4.
    T. Ito, T. Nakamura, H. Ishikawa: IEEE Trans. ED-29, 498 (1982)Google Scholar
  5. 5.
    C. Chang, N. Johnson, S. Lyon: Appl. Phys. Lett.44, 316 (1984)Google Scholar
  6. 6.
    M.M. Moslehi, S.C. Shatas, K.C. Saraswat: Appl. Phys. Lett.47, 1353 (1985)Google Scholar
  7. 7.
    A.M. Hodge, C. Pickering, A.J. Pidduck, R.W. Hardeman: Presented at M.R.S. Boston (1985)Google Scholar
  8. 8.
    J. Nulman, J.P. Krusius, A. Gat: IEEE EDL-6, 205 (1985)Google Scholar
  9. 9.
    M. Moslehi, K. Saraswat: IEEE Trans. ED-32, 106 (1985)Google Scholar
  10. 10.
    C. Chang, A. Kramgar, D. Kahng: IEEE EDL-6, 476 (1985)Google Scholar
  11. 11.
    J. Nulman, J. Krusius: Appl. Phys. Lett.47, 148 (1985)Google Scholar
  12. 12.
    N. Chan Tung, Y. Caratini, J.L. Buevoz: Mat. Res. Soc. Symp. Proc.92, 147 (1987)Google Scholar
  13. 13.
    N. Chan Tung: J. Electrochem. Soc.132, 914 (1985)Google Scholar
  14. 14.
    N. Chan Tung, D.P. Vu, C. Le Pen: 4th Europ. Mat. Res. Conf. 255 (1985)Google Scholar
  15. 15.
    M. Moslehi: Mat. Res. Soc. Sym. Proc.92, 73 (1987)Google Scholar
  16. 16.
    B. Deal, A. Grove: J. Appl. Phys.36, 3770 (1965)Google Scholar
  17. 17.
    H. Massoud, J. Plummer, E. Irene: J. Electrochem. Soc.132, 1745 (1985)Google Scholar
  18. 18.
    N. Chan Tung, Y. Caratini: Electron. Lett.22, 694 (1986)Google Scholar
  19. 19.
    C.A. Paz de Araujo, Y.P. Huang, J.C. Gelpey, R. Kwor: Mat. Res. Soc. Symp. Proc.92, 133 (1987)Google Scholar
  20. 20.
    S.E. Lassig, T. Debolske, J. Crowley: Mat. Res. Soc. Symp. Proc.92, 103 (1987)Google Scholar
  21. 21.
    Y. Sato, K.J. Kiuchi: J. Electrochem. Soc.133, 652 (1986)Google Scholar
  22. 22.
    M. Lenzlinger, E. Snow: J. Appl. Phys.40, 278 (1969)Google Scholar
  23. 23.
    M.M. Moslehi, K.C. Saraswat: Presented at IEDM 157 (1984)Google Scholar
  24. 24.
    J. Nulman: Solid State Technol.4, 189 (1986)Google Scholar
  25. 25.
    Z.A. Weinberg, T.N. Nguyen, S.A. Cohen, R. Kalish: Mat. Res. Soc. Symp. Proc.52, 327 (1986)Google Scholar
  26. 26.
    M. Moslehi, S. Shatas, K. Saraswat, J. Meindl: IEEE Trans.ED-34, 1407 (1987)Google Scholar
  27. 27.
    N. Chan Tung, Y. Caratini, R. Pantel, J.L. Buevoz: Eur. Mat. Res. Soc. Proc.15, 499 (1987)Google Scholar
  28. 28.
    C. D'Anterroches: J. Microsc. Spectrosc. Electron.9, 147 (1984)Google Scholar
  29. 29.
    G. Bentini, L. Correra, C. Donolato: J. Appl. Phys.56, 2922 (1984)Google Scholar
  30. 30.
    J.M. Dilhac, C. Ganibal, F. Maron, A. Martinez: CNRS Internal report Toulouse (1987) (unpublished)Google Scholar
  31. 31.
    A.E. Widmer, W. Rehwald: J. Electrochem. Soc.133, 2403 (1986)Google Scholar

Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • N. Chan Tung
    • 1
  • Y. Caratini
    • 2
  • C. D'Anterroches
    • 1
  • J. L. Buevoz
    • 1
  1. 1.Centre National d'Etude des TélécommunicationsMeylanFrance
  2. 2.Atelier Electro Thermie, Z.A. du Pré MilletMontbonnotFrance

Personalised recommendations