Applied Physics A

, Volume 47, Issue 3, pp 237–247 | Cite as

Characteristics of thin gate dielectric in a rapid thermal processing machine and temperature uniformity studies

  • N. Chan Tung
  • Y. Caratini
  • C. D'Anterroches
  • J. L. Buevoz
Photoformation of Dielectrics II


Rapid Thermal oxidation (RTO) of silicon has been investigated in the temperature range 1000° to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energyEa of 1.4 eV. Rapid thermal nitridation of SiO2 (96 Å) has been performed at three different temperatures: 1150°, 1200°, and 1250°C for a nitridation time up to 150 s. The characteristics of both materials have been investigated by capacitance-voltage, current-voltage, high resolution transmission electron microscopy and Auger spectroscopy. The results will be discussed with special emphasis on breakdown field statistics. The influence of Rapid Thermal Annealing (RTA) on the characteristics of both oxide and nitrided oxide will also be presented. A simulation model of a rapid thermal processing machine is presented with particular attention to the formation of slip lines. The theoretical results are in good agreement with those obtained experimentally.


7755 + F 7750 + P 


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Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • N. Chan Tung
    • 1
  • Y. Caratini
    • 2
  • C. D'Anterroches
    • 1
  • J. L. Buevoz
    • 1
  1. 1.Centre National d'Etude des TélécommunicationsMeylanFrance
  2. 2.Atelier Electro Thermie, Z.A. du Pré MilletMontbonnotFrance

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