Skip to main content
SpringerLink
Log in

Tin-related shallow donor in indium selenide

  • Surfaces, Interfaces, and Layer Structures
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Hall-effect measurements in indium selenide samples doped with different amounts of tin are reported. The temperature dependance of free-electron concentration is interpreted through a single-donor single-acceptor model from which the ionisation energy of the tin related shallow donor (22 meV) and the compensation ratio are obtained. At low temperature the electron concentration departs from activated behaviour and tends to be constant. This can be interpreted through the existance of two-dimensional subbands related to interlayer planar aggregates of donor impurities that are located in energy below the tin-related donor level.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Chevy: Thèse d'Etat, Université de Paris VI (1982)

  2. A. Chevy, A. Kuhn, M.S. Martin: J. Crystal Growth38, 118 (1977)

    Google Scholar 

  3. E. Kress-Rogers, G.F. Hopper, R.J. Nicholas, W. Hayes, J.C. Portal, A. Chevy: J. Phys. C16, 4285 (1983)

    Google Scholar 

  4. A. Segura, K. Wünstel, A. Chevy: Appl. Phys. A31, 139 (1983)

    Google Scholar 

  5. A. Chevy: J. Cryst. Growth67, 119 (1984)

    Google Scholar 

  6. A. Chevy: J. Appl. Phys.56, 978 (1984)

    Google Scholar 

  7. A. Segura, F. Pomer, A. Cantarero, W. Krause, A. Chevy: Phys. Rev. B29, 5708 (1984)

    Google Scholar 

  8. F. Pomer, X. Bonet, A. Segura: Phys. Stat. Solidi (submitted)

  9. B. Marí, A. Segura, A. Chevy: Phys. Stat. Solidi (b)130, 793 (1985)

    Google Scholar 

  10. P. Kireev:La Physique des semiconducteurs (Mir, Moscow 1975)

    Google Scholar 

  11. E. Kress-Rogers, R.J. Nicholas, J.C. Portal, A. Chevy: Solid State Commun.44, 379 (1982)

    Google Scholar 

  12. J.C. Portal, R.J. Nicholas, E. Kress-Rogers, A. Chevy, J.M. Besson, J. Galibert, P. Perrier: Proc. 15th Int'l. Conf. Physics of Semiconductors (Kyoto 1980) J. Phys. Soc. Jpn.49, Suppl. A, 879 (1980)

    Google Scholar 

  13. R.J. Nicholas, E. Kress-Rogers, J.C. Portal, J. Galibert, A. Chevy: Surf. Sci.113, 379 (1982)

    Google Scholar 

  14. E. Kress-Rogers, R.J. Nicholas, A. Chevy: J. Phys. C16, 2439 (1983)

    Google Scholar 

  15. A. Segura, M.C. Martinez-Tomás, B. Marí, A. Casanovas, A. Chevy: Appl. Phys. A44, 249–260 (1987)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Departament de Física Aplicada, Facultat de Física, Burjassot, 46100, Valencia, Spain

    B. Marí & A. Segura

  2. Laboratoire de Physique de Milieux très Condensés, 4 Place Jussieu, Tour 13, F-75230, Paris Cedex 05, France

    A. Chevy

Authors
  1. B. Marí
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Segura
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Chevy
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Marí, B., Segura, A. & Chevy, A. Tin-related shallow donor in indium selenide. Appl. Phys. A 46, 125–129 (1988). https://doi.org/10.1007/BF00615920

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00615920

PACS

Search

Navigation