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High electric-field hall effect measurements onn-type InSb at 77 K

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Abstract

Pulsed Hall-effect experiments onn-type InSb at 77 K, with nanosecond time resolution, at magnetic inductions down to 2 mT and for electric field strengths up into the avalanche regime are reported. Results on mobility are compared with previous experimental data and various theoretical calculations. For the first time also results on the scattering factor as a function of electric field are given. A curious time dependent behaviour of the transverse voltage under avalanche conditions is reported. Along with the development of the avalanche the transverse voltage decreases and may even change sign. This phenomenon is qualitatively explained in terms of the magnetoconcentration effect and the change of contact properties under avalanche conditions.

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Author notes

  1. G. E. Alberga

    Present address: Picture Tube Development Dept., N.V.Philips Gloeilampenfabrieken, P.O. Box 218, NL-5600, MD Eindhoven, The Netherlands

Authors and Affiliations

  1. Physics Department, Eindhoven University of Technology, P.O. Box 513, NL-5600, MB Eindhoven, The Netherlands

    G. E. Alberga, R. G. van Welzenis & W. C. de Zeeuw

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  1. G. E. Alberga
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  2. R. G. van Welzenis
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  3. W. C. de Zeeuw
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Alberga, G.E., van Welzenis, R.G. & de Zeeuw, W.C. High electric-field hall effect measurements onn-type InSb at 77 K. Appl. Phys. A 27, 107–120 (1982). https://doi.org/10.1007/BF00615813

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