Applied Physics A

, Volume 46, Issue 1, pp 35–38 | Cite as

Reaction of evaporated Ti films with large-grained Al substrates

  • X. -A. Zhao
  • M. Thuillard
  • M. -A. Nicolet
Surfaces, Interfaces, and Layer Structures


We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.


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Copyright information

© Springer-Verlag 1988

Authors and Affiliations

  • X. -A. Zhao
    • 1
  • M. Thuillard
    • 1
  • M. -A. Nicolet
    • 1
  1. 1.California Institute of Technology 116-81PasadenaUSA

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