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Photoinjection studies of ion-implantation-induced electron traps in MOS structures

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Abstract

Trapping centers related to P+ and B+ ions implanted in the SiO2 layer as well as traps introduced into SiO2 during boron implantation through the oxide into the silicon substrate have been investigated. The internal photoemission method has been used to estimate their capture cross sectionσ and total densityN t .

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Authors and Affiliations

  1. Institute of Physics, Warsaw Technical University, Koszykowa 75, PL-00-662, Warsaw, Poland

    M. Marczewski & I. Strzałkowski

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  1. M. Marczewski
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  2. I. Strzałkowski
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Marczewski, M., Strzałkowski, I. Photoinjection studies of ion-implantation-induced electron traps in MOS structures. Appl. Phys. A 29, 233–236 (1982). https://doi.org/10.1007/BF00615073

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  • DOI: https://doi.org/10.1007/BF00615073

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