Skip to main content
SpringerLink
Log in

Positron annihilation and Hall effect in electron irradiatedn-InP crystals

  • Contributed Papers
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Positron annihilation and Hall effect inn-InP crystals as a function of electron irradiation up to 1 · 1019 cm−2 and post-irradiated isochronal annealing up to 550 °C have been studied. It is concluded that in irradiatedn-InP samples positrons interact with negatively charged acceptor-type defect with level atE c −0.33 eV, probablyV In (primary defect). In post-irradiated isochronal annealed (up to 330 °C) samples ofn-InP positron trapping occurs preferably in secondary defects-vacancy clusters, which are formed in the temperature range (150–300 °C). Inn-InP crystals containing radiation induced defects the trapping rate was found to decrease with temperature in the range (300–77) K.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G.Fabri, G.Poletti, G.Randone: Phys. Rev.151, 356–359 (1966)

    Google Scholar 

  2. L.J.Cheng, J.P.Karins, J.V.Corbett: J. Appl. Phys.50, 2962–2964 (1979)

    Google Scholar 

  3. K.P.Arefiev, V.N.Brudnyi, D.L.Budnitskii, S.A.Vorobiev, A.A.Tsoi: Fiz. Tech. Poluprov.13, 1142–1146 (1979)

    Google Scholar 

  4. S.F.Bochkarev, L.A.Ivanutin, V.P.Komlev, E.P.Prokopiev, V.M.Samoilov, V.G.Firsov, Yu.V.Funticov: Fiz. Tverdogo Tela23, 211–214 (1981)

    Google Scholar 

  5. V.N.Brudnyi, S.A.Vorobiev, A.A.Tsoi: Fiz. Tech. Poluprov.16, 193–196 (1982)

    Google Scholar 

  6. J.Leloup, H.Djerassi, H.Albany:1974 Lattice Defects in Semiconductors (Inst. Phys. Conf. Ser. 23, London and Bristol 1975) pp. 367–372

  7. J.Leloup, M.Derdouri, H.Djerassi:1976 Radiation Effects in Semiconductors (Inst. Phys. Conf. Ser. 31, Bristol, London 1977) pp. 372–378

  8. N.P.Kekelidze, G.P.Kekelidze:1976 Radiation Effects in Semiconductors (Inst. Phys. Conf. Ser. 31, Bristol, London 1977) pp. 387–394

  9. N.P.Kekelidze: Radiat. Eff.32, 113–119 (1977)

    Google Scholar 

  10. E.Yu.Brailovskii, F.K.Karapetyan, V.P.Tartachnik: Fiz. Tech. Poluprov.13, 2044–2047 (1979)

    Google Scholar 

  11. G.N.Eritzyen, V.A.Saakyan: Izv. Acad. Nauk Armenian SSR14, 210–214 (1980)

    Google Scholar 

  12. R.L.DeZafra, W.T.Soyner: Phys. Rev.113, 1547–1555 (1959)

    Google Scholar 

  13. W.Brandt, L.J.Cheng: Phys. Lett.50A, 439–440 (1975)

    Google Scholar 

  14. W.Fuhs, U.Holzhauer, F.W.Richter: Appl. Phys.22, 415–419 (1980)

    Google Scholar 

  15. G.P.Srivastava: Phys. Stat. Sol. (b)93, 761–765 (1979)

    Google Scholar 

  16. S.Das Sarma, A.Madhukar: Sol. Stat. Commun.38, 183–186 (1981)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physico-Technical Institute, Tomsk University, SU-634050, Tomsk, USSR

    V. N. Brudnyi

  2. Institute of Nuclear Physics, Tomsk Polytechnical Institute, SU-634004, Tomsk, USSR

    S. A. Vorobiev & A. A. Tsoi

Authors
  1. V. N. Brudnyi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. A. Vorobiev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. A. Tsoi
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Brudnyi, V.N., Vorobiev, S.A. & Tsoi, A.A. Positron annihilation and Hall effect in electron irradiatedn-InP crystals. Appl. Phys. A 29, 219–223 (1982). https://doi.org/10.1007/BF00615071

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00615071

PACS

Search

Navigation