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Bound defect states in IV–VI semiconductors

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Abstract

Evidence for the existence of defect states in the forbidden gap of IV–VI narrow gap semiconductors has been accumulated in the last years. Increasing attention was focused on these flaw states since IV–VI compounds, especially the lead salts, began to be frequently used for the fabrication of tunable infrared laser diodes and photovoltaic and photoconductive detectors. Localized states were observed in crystals grown without adding intentionally foreign elements as well as in crystals doped by various impurity elements. The numerous investigations of the defect level parameters using transport, optic and tunneling experiments are summarized. The nature of the defects, associated with these levels is discussed.

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    K. Lischka

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Lischka, K. Bound defect states in IV–VI semiconductors. Appl. Phys. A 29, 177–189 (1982). https://doi.org/10.1007/BF00615064

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