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Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser

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Abstract

Silicon doping into GaAs has been performed with the combination of pulsed XeCl excimer laser (wavelength: 308 nm) and silane gas (SiH4). Sheet resistances and depth profiles of the Si-doped GaAs as the functions of laser fluence, the number of laser pulses and gas pressure have been measured in order to make clear the relation between properties of doped GaAs and irradiation conditions. The secondary ion mass spectroscopy (SIMS) has revealed that the depth of Si in GaAs is limited in such a very shallow region (30–110 nm) that might be controlled easily by irradiation conditions. The efficiency for carrier generation of Si in GaAs with laser fluence is discussed.

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Authors and Affiliations

  1. Riken, the Institute of Physical and Chemical Research, Wako, 351-01, Saitama, Japan

    K. Sugioka & K. Toyoda

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  1. K. Sugioka
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  2. K. Toyoda
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Sugioka, K., Toyoda, K. Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser. Appl. Phys. A 45, 189–192 (1988). https://doi.org/10.1007/BF00615003

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  • DOI: https://doi.org/10.1007/BF00615003

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