Applied Physics A

, Volume 31, Issue 4, pp 195–199 | Cite as

Raman gain, effectiveg-value and spontaneous spin-flip Raman linewidth in Hg0.77Cd0.23Te

  • H. J. Höfling
  • H. Pascher
  • H. G. Häfele
Contributed Papers


We report on measurements of spin-flip Raman gain inn-Hg1−xCd x Te (x=0.23, carrier density 1.0×1015cm−3) as a function of the magnetic field up to 1.6T. The measurements were carried out by a small signal gain technique at a temperature of 1.8 K. Furthermore, the measurements yield lineshapes and linewidths of the spontaneous scattering and allow a precise determination of the effectiveg-value.

The highest gain observed is 0.2 cm/W. The band edge value of the effectiveg-value is −93.2 and the widths of the symmetric lines are between 18 and 120 G, depending on the magnetic field.


42.65 71.20 


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Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • H. J. Höfling
    • 1
  • H. Pascher
    • 1
  • H. G. Häfele
    • 1
  1. 1.Physikalisches InstitutUniversität WürzburgWürzburgGermany

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