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Investigations of ZnSe-ZnO structures, by using the electrooptical and Auger depth profile methods

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Abstract

Analysis of the ZnSe-oxide structures formed by anodic oxidation has been performed. Electrooptical properties were analysed as a function of parameters of anodic oxidation by means of the electroluminescence method. Surface properties of ZnSe with a ZnO layer were investigated by using an Auger depth profile analysis. A theoretical treatment of the results based upon the application of thermionic and tunneling theories to double Schottky diodes was assumed.

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Authors and Affiliations

  1. Instytut Fizyki, Uniwersytet Mikołaja Kopernika, Grudziądzka 5, PL-87-100, Toruń, Poland

    W. Bała

  2. Instytut Matematyki i Fizyki, Akademia Techniczno-Rolnicza, Kaliskiego 7, PL-85-790, Bydgoszcz, Poland

    A. Bukaluk & R. Siuda

Authors
  1. W. Bała
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  2. A. Bukaluk
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  3. R. Siuda
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Bała, W., Bukaluk, A. & Siuda, R. Investigations of ZnSe-ZnO structures, by using the electrooptical and Auger depth profile methods. Appl. Phys. A 37, 231–236 (1985). https://doi.org/10.1007/BF00614822

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  • DOI: https://doi.org/10.1007/BF00614822

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