Arsenic antisite defects as the main electron traps in plastically deformed GaAs

Abstract

It is found from DLTS measurements that plastic deformation of GaAs single crystal creates a new kind of electron traps with an activation energy of 0.37 eV, and gives rise to an increase in the concentration of main electron traps with an energy of 0.80 eV. By comparing the concentrations of the main electron traps before and after deformation with analogous concentrations of As_Ga paramagnetic centers, found by EPR experiments, it is concluded that the centers observed in both cases are of the same origin. A nonstandard feature of the main traps is discovered: linear dependence of the DLTS-peak amplitude on the logarithm of the filling-pulse duration time. This feature can be explained in terms of the barrier-limited capture rate, assuming the traps are arranged in rows.