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Applied Physics A

, Volume 26, Issue 3, pp 191–202 | Cite as

Space-charge analysis for the admittance of semiconductor junctions with deep impurity levels

  • C. Ghezzi
Contributed Papers

Abstract

The space charge analysis within depletion layers in semiconductors containing deep trap levels is reconsidered. A simple approach to the frequency dependence of the admittance ofp+/n junctions is properly generalized in order to deal with the effect of interface states at heterojunctions and Schottky barriers, as well as with a special case for the space distribution of the trap density. The density of interface states atp-Ge/CdS heterojunctions is so derived. Approximate analytical solutions accounting for a spatially distributed time constant are obtained for the admittance ofp+/n junctions with a single trap state. A comparison with experimental data is given and discussed.

PACS

71.55 85.30 

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Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • C. Ghezzi
    • 1
    • 2
  1. 1.Istituto MASPEC del C.N.R. ParmaItaly
  2. 2.Istituto di FisicaUniversità di FerraraItaly

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