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Applied Physics A

, Volume 26, Issue 3, pp 179–184 | Cite as

Thermal annealing and light irradiation effects on hole and electron drift mobilities of Se93.5As6.5 and Se94.3Ge5.7 films

  • T. Takahashi
  • M. Ichikawa
  • T. Fujita
  • T. Hirai
Contributed Papers
  • 26 Downloads

Abstract

Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.

PACS

72.20 

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Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • T. Takahashi
    • 1
  • M. Ichikawa
    • 2
  • T. Fujita
    • 2
  • T. Hirai
    • 3
  1. 1.Department of Chemistry, College of General EducationThe University of TokyoTokyoJapan
  2. 2.Mobara WorksHitachi Ltd.ChibaJapan
  3. 3.Central LaboratoryHitachi Ltd.TokyoJapan

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