Applied Physics A

, Volume 26, Issue 3, pp 151–156 | Cite as

Injection electroluminescence from CdTe p-n junctions prepared by LPE

  • M. Kitagawa
  • J. Saraie
  • T. Tanaka
Contributed Papers

Abstract

CdTep-n junction diodes were prepared by LPE using CdCl2 as a solvent. Excess cadmium was added to the CdCl2-CdTe solution. Capacitance-voltage characteristics show that the diode structure is ofp-i-n type. Injection electroluminescence spectra reveal that radiative transitions occur mainly in thep-type region; relevant recombination centers are discussed in connection with those in a previous paper on the photoluminescence of CdTe:P crystals. Temperature dependences of the electroluminescence spectra were explained taking into account a change in sites where electrons radiatively recombine.

PACS

78.60.Fi 73.40.Lq 81.10.Dn 

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Copyright information

© Springer-Verlag 1981

Authors and Affiliations

  • M. Kitagawa
    • 1
  • J. Saraie
    • 1
  • T. Tanaka
    • 1
  1. 1.Department of Electronics, Faculty of EngineeringKyoto UniversityKyotoJapan

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