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Model for noise processes in semiconductor laser amplifiers:

Part II The Fabry-Perot semiconductor laser amplifier

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Abstract

A model for the noise processes in a Fabry-Perot semiconductor laser amplifier is presented. This model is based on the application of perturbation techniques to the travelling-wave rate equations for the amplifier. The model includes the effects of end-facet reflections and the backwards-travelling wave into the amplifier. The noise power spectral densities for the intensity, electron density and phase noise are derived. The model can be applied to an arbitrary gain profile and does not require homogenization of the photon field over the length of the device.

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Authors and Affiliations

  1. Telecom Research Laboratories, 770 Blackburn Road, 3168, Clayton, Victoria, Australia

    K. Hinton

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  1. K. Hinton
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Hinton, K. Model for noise processes in semiconductor laser amplifiers:. Opt Quant Electron 23, 755–773 (1991). https://doi.org/10.1007/BF00613005

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  • DOI: https://doi.org/10.1007/BF00613005

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