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Short-circuit diffusion in the growth of nickel oxide scales on nickel crystal faces

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Abstract

A study has been made of the growth of nickel oxide layers on the (100), (110), and (111) crystal faces of nickel exposed to oxygen for periods up to 100 hr at temperatures in the range 500–800°C, These layers grow at a rate dependent upon the crystallographic orientation of the nickel face even at thicknesses within the scaling range. The (100) face oxidized more rapidly than the (110) and (111) nickel faces while the latter faces oxidized at different relative rates dependent upon temperature. A diffusional model is employed to interpret the oxidation kinetics wherein nickel transport proceeds in nickel oxide both by short-circuit diffusion at grain boundaries and by lattice diffusion.

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Author notes

  1. T. Homma

    Present address: Institute of Industrial Science, University of Tokyo, Tokyo, Japan

Authors and Affiliations

  1. Department of Metallurgy and Materials Science, McMaster University, Hamilton, Ontario, Canada

    R. Herchl, N. N. Khoi, T. Homma & W. W. Smeltzer

Authors
  1. R. Herchl
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  2. N. N. Khoi
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  3. T. Homma
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  4. W. W. Smeltzer
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Additional information

This work forms part of a research program sponsored by the National Research Council of Canada.

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Herchl, R., Khoi, N.N., Homma, T. et al. Short-circuit diffusion in the growth of nickel oxide scales on nickel crystal faces. Oxid Met 4, 35–49 (1972). https://doi.org/10.1007/BF00612506

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  • DOI: https://doi.org/10.1007/BF00612506

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