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Features of the degradation of optical emitters based on GaAs-Ga1−yAlyAs-Ga1−xAlxAs n+-i-n heterostructures

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 31, No. 3, pp. 453–456, September, 1979.

We thank M. K. Sheinkman for discussion of the mechanisms of degradation of semiconductor sources of optical radiation.

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Ptashchenko, A.A., Timokhov, F.P. Features of the degradation of optical emitters based on GaAs-Ga1−yAlyAs-Ga1−xAlxAs n+-i-n heterostructures. J Appl Spectrosc 31, 1121–1123 (1979). https://doi.org/10.1007/BF00611544

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  • DOI: https://doi.org/10.1007/BF00611544

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