Isolation spectra for InGaAs/GaAs strained single quantum well laser diode optical switches
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The spectral dependence of gain and loss for an InGaAs/GaAs strained single quantum well laser diode were measured. High gain and high isolation at the second quantized transition wavelength can be obtained with a low injection current. A strained single quantum well structure is suitable for construction of an integrated optical matrix switch with low power consumption.
KeywordsPower Consumption Communication Network Laser Diode High Gain Injection Current
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