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Optical and Quantum Electronics

, Volume 23, Issue 8, pp 1037–1043 | Cite as

Isolation spectra for InGaAs/GaAs strained single quantum well laser diode optical switches

  • M. Ikeda
  • M. Wada
Papers

Abstract

The spectral dependence of gain and loss for an InGaAs/GaAs strained single quantum well laser diode were measured. High gain and high isolation at the second quantized transition wavelength can be obtained with a low injection current. A strained single quantum well structure is suitable for construction of an integrated optical matrix switch with low power consumption.

Keywords

Power Consumption Communication Network Laser Diode High Gain Injection Current 
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References

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Copyright information

© Chapman & Hall 1991

Authors and Affiliations

  • M. Ikeda
    • 1
  • M. Wada
    • 1
  1. 1.NTT Opto-electronics LaboratoriesKanagawaJapan

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