Advertisement

Journal of Applied Electrochemistry

, Volume 9, Issue 5, pp 635–640 | Cite as

The distribution of antimony in the oxide layer formed by potentiostatic oxidation of Pb-Sb alloy

  • F. Arifuku
  • H. Yoneyama
  • H. Tamura
Article

Abstract

The distribution of antimony within the oxide films on Pb-Sb alloy prepared by potentiostatic oxidation in H2SO4 solutions was examined by SIMS. The study of oxide films prepared by applying different potentials for three hours showed that two types of film were obtained depending on whether the potential was more negative or more positive than 1·5 V. Antimony profiles were obtained for films at several stages in the initial growth. It was found that antimony was retained in the oxide film at 1·5 V during both nucleation and two- or three-dimensional growth of PbO2 and at 1·6 V during the lateral overlaps of three-dimensional centres of PbO2. Relationships between the antimony distribution profiles and the oxide film growth are discussed.

Keywords

Oxide Physical Chemistry H2SO4 Oxide Layer Antimony 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    J. Burbank,J. Electrochim. Soc. 104 (1957) 693.Google Scholar
  2. [2]
    Idem, ibid 111 (1964) 1112.Google Scholar
  3. [3]
    D. Kodes,Chem. Ing. Tech. 38 (1966) 638.Google Scholar
  4. [4]
    M. P. J. Brennan, B. N. Stirrup and N. A. Hampson,J. Appl. Electrochem. 4 (1974) 49.Google Scholar
  5. [5]
    P. Ruetschi and R. T. Angstadt,J. Electrochem. Soc. 111 (1964) 1323.Google Scholar
  6. [6]
    P. Casson, N. A. Hampson and K. Peters,J. Electroanalyt. Chem. 83 (1977) 87.Google Scholar
  7. [7]
    Idem, J. Electrochem. Soc. 124 (1977) 1655.Google Scholar
  8. [8]
    E. M. L. Valeriote and L. D. Gallop,ibid 124 (1977) 370.Google Scholar
  9. [9]
    Idem, ibid 124 (1977) 380.Google Scholar
  10. [10]
    T. F. Sharpe,ibid 122 (1975) 845.Google Scholar
  11. [11]
    Idem, ibid 124 (1977) 168.Google Scholar
  12. [12]
    F. Arifuku, H. Yoneyama and H. Tamura,J. Appl. Electrochem. 9 (1979) 631.Google Scholar
  13. [13]
    J. J. Lander,J. Electrochem. Soc. 98 (1951) 213.Google Scholar
  14. [14]
    D. E. Swets,ibid 120 (1973) 925.Google Scholar
  15. [15]
    E. J. Ritchie and J. Burbank,ibid 117 (1970) 229.Google Scholar

Copyright information

© Chapman and Hall Ltd 1979

Authors and Affiliations

  • F. Arifuku
    • 1
  • H. Yoneyama
    • 1
  • H. Tamura
    • 1
  1. 1.Department of Applied Chemistry, Faculty of EngineeringOsaka UniversityOsakaJapan

Personalised recommendations