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Photoluminescence of AlxGa1-xAs with a graded forbidden band under pulse excitation

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Literature cited

  1. V. S. Osinskii, V. N. Avdei, and S. A. Malyshev, "Nonstationary carrier transport in a semiconductor with a gap gradient,” in: Abstract for the Ninth Conference on Semiconductor Theory [in Russian], Tbilisi (1978), pp. 276–277.

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  3. V. F. Kovalenko and I. E. Maronchuk, "Photoluminescence of variband AlxGa1-xAs solid solutions,” Fiz. Tekh. Poluprovodn.,8, No. 7, 1366 (1974).

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Authors
  1. V. I. Osinskii
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  2. S. A. Malyshev
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  3. I. I. Prikhod'ko
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  4. M. P. Ryzhkov
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Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 33, No. 4, pp. 748–750, October, 1980.

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Osinskii, V.I., Malyshev, S.A., Prikhod'ko, I.I. et al. Photoluminescence of AlxGa1-xAs with a graded forbidden band under pulse excitation. J Appl Spectrosc 33, 1153–1154 (1980). https://doi.org/10.1007/BF00608397

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  • DOI: https://doi.org/10.1007/BF00608397

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