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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 31, No. 4, pp. 717–721, October, 1979.
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Gutkin, A.A., Dmitriev, M.V. & Khait, V.M. Effect of the intermediate layer on the transmittance of light into a semiconductor for the Au-SiO2-Si AND Au-SiO2-GaAs structures. J Appl Spectrosc 31, 1304–1308 (1979). https://doi.org/10.1007/BF00608188
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DOI: https://doi.org/10.1007/BF00608188