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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 14, No. 3, pp. 405–411, March, 1971.
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Proshko, G.P., Kurennaya, O.N., Shmerkin, I.A. et al. Effects of diffusion annealing on the electrophysical and photoluminescent characteristics of gallium arsenide diodes. J Appl Spectrosc 14, 303–306 (1971). https://doi.org/10.1007/BF00606032
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DOI: https://doi.org/10.1007/BF00606032