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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 35, No. 2, pp. 338–343, August, 1981.
The authors are indebted to L. F. Vorontsov for help in the measurements of the lightemitting diode characteristics.
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Baranov, V.M., Ivanov, V.S., Irkha, V.I. et al. Role of p-n junction inhomogeneities in the degradation of InGaAsP light-emitting diodes. J Appl Spectrosc 35, 931–935 (1981). https://doi.org/10.1007/BF00605343
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DOI: https://doi.org/10.1007/BF00605343