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A photoluminescence and Raman scattering study of the properties of Si-doped In0.52Al0.48As grown lattice-matched to InP substrates

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Journal of Materials Science Letters

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 2263, Singapore, Singapore

    S. F. Yoon, Y. B. Miao & K. Radhakrishnan

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  1. S. F. Yoon
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  2. Y. B. Miao
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  3. K. Radhakrishnan
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Yoon, S.F., Miao, Y.B. & Radhakrishnan, K. A photoluminescence and Raman scattering study of the properties of Si-doped In0.52Al0.48As grown lattice-matched to InP substrates. J Mater Sci Lett 15, 311–313 (1996). https://doi.org/10.1007/BF00591647

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  • DOI: https://doi.org/10.1007/BF00591647

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